Microelectronics 1
Its a masters level course only taught for students still registered in the old examination regulations of the University. It is no more offered to new students
Module leader: Prof. Dr. B. Choubey
Lecturer: Prof. Dr. B. Choubey and colleagues
Language: English
Learning Outcomes
The learning course of the course are to provide the student with an ability to
- Understand Metal Oxide Semiconductor devices as building blocks for large scale CMOS digital circuits.
- Explain the physics of MOSFET devices in very small dimensions
- Design simple digital circuits like inverters and gates.
- Explain the electrical characteristics of these circuits
- Analyse the speed, timing and power dissipation of digital circuits
- Explain different types of memory modules used in electronic designs, their electrical characteristics and design simple memory cells
Syllabus
- MOS device: Fabrication, I-V Characteristics, Deep Sub-Micron effects, Subthreshold device operation, CMOS scaling
- p { line-height: 115%; margin-bottom: 0.25cm; background: transparent }CMOS Digital Circuits: Inverter and complex gates, Schmitt trigger inputs, Tri-state outputs, Transmission gates
- Digital characteristics: Speed – propagation times, Fan-out, set-up and hold times clock skew, power consumption mechanisms, capacitance charging, leakage, short-circuit currents.
- Memory: Architectures, Circuits and Sense amplifiers, Tunnelling and flash memories
- Signal integrity and high speed readouts
Examination Style: K2
Media: Presentations placed online on Moodle
Textbook
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Integrated Circuit Design, by Neil H.E. Weste and David M. Harris, Pearson [also sold as CMOS VLSI Design: A Circuits and Systems Perspective]
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CMOS Digital Integrated Circuits, Sung-Mo Kang, Yusuf Leblebici and Chulwoo Kim, McGraw Hill